Improved Perovskite Solar Cell Performance by High Growth Rate Spatial Atomic Layer Deposited Titanium Oxide Compact Layer
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چکیده
منابع مشابه
Passivation of GaAs surface by atomic-layer-deposited titanium nitride
The suitability of titaniumnitride (TiN) for GaAs surface passivation and protection is investigated. A 2–6nm thick TiN passivation layer is deposited by atomic layer deposition (ALD) at 275 C on top of InGaAs/ GaAs near surface quantum well (NSQW) structures to study the surface passivation. X-ray reflectivity measurements are used to determine the physical properties of the passivation layer....
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2021
ISSN: 2168-6734
DOI: 10.1109/jeds.2020.3039189